PURPOSE: To simply remove static electricity from an insulating material or the like arranged inside a high-vacuum chamber of a manufacturing device for a semiconductor by a method wherein an alternating field is impressed on the insulating material which has been electrified by the static electricity.

CONSTITUTION: Coating layers 13a, 13b formed on the surface of chuck electrodes 11a, 11b composed of a conductive metal are exposed to a strong electric field and are electrified by static electricity. Therefore, a switching part 15 is actuated by an off signal input by a control device 14; the chuck electrodes 11a, 11b are connected to an alternating-current high-voltage power supply 17; an alternating-current high voltage is impressed on the chuck electrodes 11a, 11b from the alternating-current high-voltage power supply 17; an alternating field is impressed on the coating layers 13a, 13b which are insulating materials. By this setup, it is simple to remove the static electricity from the insulating materials or the like which are arranged inside a high-vacuum chamber of a manufacturing device for a semiconductor.