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Title:
RESIN FOR CONSTITUTING BASE MATERIAL OF UPPER LAYER OF MULTILAYERED RESIST
Document Type and Number:
Japanese Patent JPH02160244
Kind Code:
A
Abstract:

PURPOSE: To enable to form a half-micron pattern even on a substrate having stages by allowing an alkyl compd. having Si atoms to react with polyhydroxy maleimide, and transforming 20-50% of OH groups of obtd. polymer to ether bonds by modification.

CONSTITUTION: An Si-modified polymer for constituting a base resin of an upper layer resist is prepd. from polyhydroxy maleimide as starting material by modifying with an alkyl compd. contg. Si atoms, for example, ethyl(polydimethyl siloxane)methylene chloride, wherein halogen atoms which combine with H atoms in OH groups of the starting polymer and eliminate the H atoms are contained in the alkyl compd. Thus, 20-50% of the OH groups is modified to ether bonds. By this method, a half micro pattern can be formed on a substrate even if stages are present on the substrate.


Inventors:
SAITO KAZUMASA
SHIBA SHOJI
WATABE KEIJI
NAMIKI TAKAHISA
YONEDA YASUHIRO
Application Number:
JP31374588A
Publication Date:
June 20, 1990
Filing Date:
December 14, 1988
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
G03F7/038; G03F7/075; G03F7/26; H01L21/027; (IPC1-7): G03F7/038; G03F7/075; G03F7/26; H01L21/027
Attorney, Agent or Firm:
Aoki Akira (4 outside)