RESIN SEALED TYPE SEMICONDUCTOR DEVICE

Japanese Patent JP3589694

B2

PURPOSE: To provide a resin sealed type semiconductor device without causing swelling and crack from occurring on soldering and Au wire to be disconnected in a later thermal shock test in a thin-type surface-mount type resin sealed type semiconductor device using Cu lead frame.
CONSTITUTION: In the semiconductor device which is sealed by an epoxy resin sealing material where Si chip area is 25mm2 or larger or one side is 5mm or longer, package thickness is 3mm or less, and a lead frame is made of Cu, the epoxy resin sealing material contains epoxy resin, a curing agent, and an inorganic filling agent consisting of a mixture of 65-76vol.% crystal silica and fused silica or crystal silica and a linear expansion coefficient α1 is 1.6-2.0×10-5/°C.

WO/2016/098709	EPOXY RESIN COMPOSITION, RESIN SHEET, PREPREG, LAMINATE, PROCESS FOR PRODUCING EPOXY RESIN COMPOSITION, AND CURED OBJECT
JPS6056732	[Title of the Invention] A constituent for thermosetting fabrication

Tatsuo Kawada
Hiroshi Suzuki
Kojima Hiroki
Kazuhiko Miyabayashi
Osamu Horie

JP8268594A

November 17, 2004

March 30, 1994

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Hitachi Chemical Co., Ltd.

C08L63/00; C08G59/20; C08G59/24; C08G59/62; H01L23/29; H01L23/31; (IPC1-7): H01L23/29; H01L23/31

JP4114028A
JP525367A
JP1171257A
JP5315472A
JP680763A

Tetsuo Hotaka

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