Title:
RESIST COMPOSITION
Document Type and Number:
Japanese Patent JPS592042
Kind Code:
A
Abstract:
PURPOSE: To prepare a dry development type resist composition capable of forming a fine pattern without causing swelling or shrinking of the resist, by adding a silicon compd. to a polymer contg. halogen.
CONSTITUTION: A dry development negative type resist capable of forming fine patterns without causing swelling or shrinking of the resist is obtained by adding 1W5wt% silicon compd. having the shown formula (X is phenyl, methyl, biphenyl, phenylamino, phenoxy, benzyl, or the like; Y is H, OH, azido, vinyl, phenoxy, phenyl, biphenyl, or the like; and Z is phenyl, OH, benzyl, phenoxy, biphenyl, or the like), such as triphenylsilane, to 50W99wt% polymer contg. halogen, such as polyvinyl chloride or halogenated 1,3-butadiene polymer.
Inventors:
YONEDA YASUHIRO
KITAMURA TATEO
MIYAGAWA MASASHI
KITAMURA TATEO
MIYAGAWA MASASHI
Application Number:
JP11064282A
Publication Date:
January 07, 1984
Filing Date:
June 29, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G03F7/26; G03F7/039; G03F7/075; G03F7/36; (IPC1-7): G03C1/72; G03C5/00; G03C5/24
Attorney, Agent or Firm:
Aoki Akira
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