Title:
RESIST MATERIAL, RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2009192784
Kind Code:
A
Abstract:
To provide a resist material and a resist protective film material using a polymer compound (A), which are excellent in water repellency and water sliding property in immersion lithography and achieve such good lithography performance as to cause few development defects.
The polymer compound (A) obtained by copolymerizing a monomer [formula (1a)] having hexafluoroalcohol in a side chain and a monomer [formula (1b)] in which the hydroxyl group of hexafluoroalcohol in a side chain is protected is used as an additive material and a resist protective film material for a photoresist for use in immersion lithography.
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Inventors:
HARADA YUJI
HATAKEYAMA JUN
MAEDA KAZUNORI
KOBAYASHI TOMOHIRO
HATAKEYAMA JUN
MAEDA KAZUNORI
KOBAYASHI TOMOHIRO
Application Number:
JP2008032896A
Publication Date:
August 27, 2009
Filing Date:
February 14, 2008
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/039; G03F7/004; G03F7/023; G03F7/11; G03F7/38; H01L21/027
Domestic Patent References:
| JP2007297590A | 2007-11-15 | |||
| JP2008139789A | 2008-06-19 | |||
| JP2009191151A | 2009-08-27 |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa