PURPOSE: To enhance sensitivity and dry etching performance and to improve resolution by using a copolymer made from specified monomers.
CONSTITUTION: The copolymer used here is made from monomers represented by formulae I and II in which R1 is H, 1W8C alkyl, or halogen, and it is substd. at one of the o-, m-, and p-position with respect to an epoxy group substd. at the same benzene ring, W, X, Y, Z are each H, halogen, cyano, 1W6C alkyl or such haloalkyl, 6W30C aryl, -COOR2, or -COR2, and R2 is 1W12C alkyl, 6W30C aryl substd. by 1W6C alkyl, or the like. Such a copolymer is used for both of positive and negative type resists, and preferable number average mol.wt. is 3,000W 500,000 for the negative type, and 10,000W1,000,000 for the positive type, and a preferable molar fraction of formula I is 30W90% for the negative type, and 5W 40% for the positive type.
AI HIDEO
MIYAO MANABU
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