Title:
レジストパターン形成方法
Document Type and Number:
Japanese Patent JP5750476
Kind Code:
B2
Inventors:
Tomoyuki Ando
Abe Sho
Ryoji Watanabe
Komei Hirahara
Abe Sho
Ryoji Watanabe
Komei Hirahara
Application Number:
JP2013152143A
Publication Date:
July 22, 2015
Filing Date:
July 22, 2013
Export Citation:
Assignee:
Tokyo Ohka Kogyo Co., Ltd.
International Classes:
G03F7/038; G03F7/004; G03F7/20
Domestic Patent References:
| JP2010040849A | ||||
| JP2005215112A | ||||
| JP2007286161A | ||||
| JP10012543A | ||||
| JP5326358A | ||||
| JP2007328323A | ||||
| JP2006293381A | ||||
| JP2001203139A | ||||
| JP2001133979A | ||||
| JP2001126983A |
Foreign References:
| US20080160423 | ||||
| US20040170926 | ||||
| US20080160424 |
Other References:
S. Nakao et al.,0.10μm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light,Japanese Journal of Applied Physics,日本,The Japan Society of Applied Physics,1999年 5月15日,Vol.38, No.5A,pp.2686-2693
H. Nakamura,Contact hole formation by multiple exposure technique in ultralow k1 lithography,Journal of Microlithography, Microfabrication, and Microsystems,米国,The International Society for Optical Engineering,2005年,Vol.4, Iss.2,pp.023005-1-023005-8
H. Nakamura,Contact hole formation by multiple exposure technique in ultralow k1 lithography,Journal of Microlithography, Microfabrication, and Microsystems,米国,The International Society for Optical Engineering,2005年,Vol.4, Iss.2,pp.023005-1-023005-8
Attorney, Agent or Firm:
Sumio Tanai
Masatake Shiga
Suzuki Mitsuyoshi
Mitsunaga Igarashi
Masatake Shiga
Suzuki Mitsuyoshi
Mitsunaga Igarashi