PURPOSE: To create a mask material whose shape can be controlled easily by forming a dummy layer pattern on a substrate. applying photoresist on the pattern, applying ultraviolet rays to a photoresist layer via a photomask for development. curing the photoresist, and then eliminating only a dummy layer.
CONSTITUTION: Only a photoresist layer is eliminated using acetone and a dummy layer is formed. Then, after spincoating the photoresist, prebaking is performed and a photoresist layer 4 is formed. Then, ultraviolet rays are applied via a photomask and development is made. After this, far-ultraviolet rays are applied while heating in vacuum and the photoresist layer of an upper- layer part is cured and then is insolubilized in a development liquid. Then, only polyimide layer is selectively side-etched using the development liquid. Therefore, since the photoresist at the upper-layer part is not subjected to etching, the pattern dimension and accuracy of photoresist are maintained to be the same as the initial development.
KAWABE TAKASHI
OKAI TETSUYA
FUYAMA MORIAKI
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