To enhance the strength of a resist after development and to avoid the falling of a pattern even in the case of a fine pattern by bringing a resist film into contact with an acidic soln. after exposure and development.

A resist film 2 is formed on a wafer 1 and baked. Paddle development is carried out using a developer 3 to form a resist pattern 4. An aq. sulfuric acid soln. used as an acidic soln. 6 is dropped and the pattern 4 on the wafer 1 is baked with a heater 7. The acidic soln. 6 is washed off by turning the wafer 1 while dropping pure water as a rinse 8 on the wafer 1, the rinse 8 is removed by shaking and the pattern 4 is dried. Since the resist film 2 after development is brought into contact with the acidic soln. 6 to further harden the resist, the falling of the pattern due to the surface tension of the rinse 8 in the drying process can be prevented.