PURPOSE: To obtain a resist pattern having superior dry etching resistance and satisfactory working accuracy by forming a resist pattern with a resist material mixed with a thermally cross-linking material.

CONSTITUTION: A resist material mixed with a thermally cross-linking material is used. At the time of post-baking by which a resist is heat-cured, the resist material is cross-linked by the thermally cross-linking material. The cross-linking material may be a quinone, benzophenone, azido, epoxy or sulfur compd. which causes a crosslinking reaction at a temp. below the softening point of the resist material. Thus, the etching resistance is improved and satisfactory working accuracy is obtd. even when a fine pattern is formed.