Title:
RESIST RESIN AND RESIST COMPOSITION OF CHEMICAL AMPLIFICATION TYPE
Document Type and Number:
Japanese Patent JP3953712
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain the subject resin capable of being dissolved in an aqueous alkaline solution with an acid and suitable for DUV excimer laser lithography or electron beam lithography having high resistance to dry etching by bringing the resin to contain a specific monomer unit.
SOLUTION: A resin is brought to contain a monomer unit selected from formula I (R1 and R2 are each H, an alkyl or a protecting group removable with acid) and formula II (R3 is H, an alkyl or a protective group removable with acid; n is 0-4) in preferably 0.5-40 mole %. To bring the resin to contain the monomer expressed by formula I, e.g. a monomer such as di(methyl)-2,2'-[oxybis(methylene)]bis-2-propenoate or the like is used as the monomer and (co)polymerized. In case of the monomer expressed by formula II, e.g. 2-methylene-butylolactone or the like is (co)polymerized as the monomer. The resin preferably contains a monomer unit containing an alicyclic skeleton and a monomer unit having a lactone skeleton.
Inventors:
Masayuki Fujiwara
Yukiya Wakisaka
Tokimitsu Toru
Naoshi Murata
Ryo Kamon
Yo Momose
Yukiya Wakisaka
Tokimitsu Toru
Naoshi Murata
Ryo Kamon
Yo Momose
Application Number:
JP2000211381A
Publication Date:
August 08, 2007
Filing Date:
July 12, 2000
Export Citation:
Assignee:
Mitsubishi Rayon Co., Ltd.
International Classes:
C08F224/00; G03F7/039; C08F220/10; C08F220/12; C08F220/28; C08K5/00; C08L33/04; C08L37/00; H01L21/027; (IPC1-7): C08F220/28; C08F220/12; C08F224/00; C08K5/00; C08L33/04; C08L37/00; G03F7/039; H01L21/027
Domestic Patent References:
| JP9258042A | ||||
| JP9258041A | ||||
| JP9012644A | ||||
| JP9012632A | ||||
| JP2000159758A | ||||
| JP10207069A |