Title:
RESISTANCE MEMORY DEVICE EQUIPPED WITH STORAGE NODE CONTAINING NONCRYSTALLINE SOLID ELECTROLYTE LAYER
Document Type and Number:
Japanese Patent JP2007194631
Kind Code:
A
Abstract:
To provide a resistance memory device equipped with a storage node containing a noncrystalline solid electrolyte layer.
A memory device comprises a switching device and a storage node connected to the switching device. The storage node comprises an upper electrode and a lower electrode that are formed of a metal of bivalence or more, a noncrystalline solid electrolyte layer provided between the upper and lower electrodes, and an ion source layer formed of a monovalent metal.
COPYRIGHT: (C)2007,JPO&INPIT
Inventors:
RI SHOKEN
CHOI SANG-JUN
CHOI SANG-JUN
Application Number:
JP2007007174A
Publication Date:
August 02, 2007
Filing Date:
January 16, 2007
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L27/10; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro