PURPOSE: To enable it to grasp a correct shifting value as well as to make improvements in manufacturing yield and reliability for a semiconductor element by installing a shifting check pattern in and around the four sides of a reticule.
CONSTITUTION: An element pattern area 1 consisting of a metal film or metal oxide film is formed in a reticule, and furthermore both Y-X directional shifting check patterns 3, 4 are installed in a peripheral part of four sides. Since these shifting check patterns 2, 4 are formed in four directions, shifting pattern in all directions of the element pattern area 2 are checkable. With this constitution, such a defect that manufacturing yield and reliability for a semiconductor are lowered due to the shifting pattern is brought to nothing.
JPS5251874A | 1977-04-26 | |||
JPS53128278A | 1978-11-09 | |||
JPS5463680A | 1979-05-22 | |||
JPS61124943A | 1986-06-12 |