Title:
RIBBON CRYSTAL GROWING METHOD BY LATERAL PULLING ACCOMPANIED BY CIRCULATING MELT CONVECTION
Document Type and Number:
Japanese Patent JPS5580797
Kind Code:
A
Abstract:
PURPOSE:To prevent accidents due to falling of a melt from a crucible and stabilize the operation by heating the melt in the crucible whose diameter and depth are about equal so that the melt is circulated in a specified direction by convection and by growing a ribbon crystal. CONSTITUTION:Crucible 2 whose diameter and depth are about equal is set in heat resistant crucible 5 provided with heater 6 along whole vertical outer wall 5a. When crystal seed 3 is contacted to raised surface 1a of melt 1 of semiconductor Si or the like to grow a ribbon crystal by lateral pulling, in order to heat the outer wall 5a portion to a sufficiently high temp. and well control heating of a bottom portion corresponding to the central portion of crucible 2, heat shielding plate 7 is attached so that it well shields wall 5a and the effect is reduced at the bottom central portion. Thus, melt 1 is circulated by convection rising along wall 5a, progressing in the opposite direction to a ribbon crystal pulling direction under the solid-liquid interface, and falling at the central portion of crucible 2. As a result, unfavorable form due to drop growing is controlled, so melt 1 is prevented from falling from crucible 2.
Inventors:
KUDOU HIROSHI
MATSUO KAZUYOSHI
MAKI TAKESHI
YOSHIOKA MASAMICHI
MATSUO KAZUYOSHI
MAKI TAKESHI
YOSHIOKA MASAMICHI
Application Number:
JP15300478A
Publication Date:
June 18, 1980
Filing Date:
December 09, 1978
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
C30B15/06; C30B29/64; H01L21/208; (IPC1-7): C30B15/06; H01L21/18