ROTARY COATING APPARATUS

Japanese Patent JP2003145014

A

To provide a rotary coating apparatus in which a gas flowing along the surface of a semiconductor wafer is stabilized.

The rotary coating apparatus 10 is provided with a chamber 12, a supporting table 16 arranged rotatably in the chamber and for supporting the semiconductor wafer W, a liquid chemical dropping apparatus 20 for dropping a liquid chemical to be applied on the wafer supported by the supporting table 16 and a rotary driven gas flow producing apparatus 40 in which an inside opening part 50 is arranged oppositely to the outer circumferential edge of the wafer supported by the supporting table and which has a flow passage extending to an outside opening part 52 from the inside opening part. In the structure, when the gas flow producing apparatus is rotary driven, the gas on the wafer is sucked by the inside opening of the gas flow producing apparatus and the gas on the substrate to be treated flows in a stable state like a laminar flow.

JPH0582433	SEMICONDUCTOR DEVICE MANUFACTURING DEVICE
JPH06151296	METHOD AND DEVICE FOR HIGH PRESSURE SUPPLY
WO/2002/035588	PRODUCTION METHOD OF SEMICONDUCTOR DEVICE AND PRODUCTION SYSTEM OF SEMICONDUCTOR DEVICE

IKEDA TORU
PANG LILY
RICK ROBERT

JP2001335323A

May 20, 2003

October 31, 2001

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APPLIED MATERIALS INC

G03F7/16; B05C11/08; H01L21/027; H01L21/31; (IPC1-7): B05C11/08; G03F7/16; H01L21/027; H01L21/31

Yoshiki Hasegawa (2 outside)

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