Title:
RUTHENIUM ETCHANT COMPOSITION, METHOD FOR FORMING PATTERN AND MANUFACTURING ARRAY SUBSTRATE USING THE SAME, AND ARRAY SUBSTRATE MANUFACTURED BY THE METHOD
Document Type and Number:
Japanese Patent JP2023126198
Kind Code:
A
Abstract:
To provide a ruthenium etchant composition that can etch only ruthenium metal film at high speed without RuO4 gas formation and has excellent storage stability at room temperature.SOLUTION: This invention relates to a ruthenium etchant composition containing periodic acid and ammonium ions, and having a pH of 6 to 7.5 or higher; a method for forming pattern including the step of etching a ruthenium metal film using the etchant composition; a method for manufacturing an array substrate for a display device including the method for forming pattern; and an array substrate for a display device manufactured by the method.SELECTED DRAWING: None
Inventors:
KIM JI-WON
ROH JIN-KYU
YOON HYO-JOONG
PARK HAN-WOO
SUNG MIN-JAE
KIM SOO-JIN
OH JUNG-MIN
BAE SANG-WON
ROH JIN-KYU
YOON HYO-JOONG
PARK HAN-WOO
SUNG MIN-JAE
KIM SOO-JIN
OH JUNG-MIN
BAE SANG-WON
Application Number:
JP2023029841A
Publication Date:
September 07, 2023
Filing Date:
February 28, 2023
Export Citation:
Assignee:
DONGWOO FINE CHEM CO LTD
SAMSUNG ELECTRONICS CO LTD
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/308
Attorney, Agent or Firm:
Patent Attorney Fukami Patent Office
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