To provide a method for producing single crystal SiC by which single crystal SiC having unconventionally extremely high quality and large surface area can be stably, continuously and epitaxially grown, and to provide the high quality single crystal SiC obtained by the method.
The method for producing the single crystal SiC includes: an arrangement process for arranging a susceptor 5 to which a SiC seed crystal 4 is fixed and a raw material feeding tube 6 in a crucible 2; and a growth process for growing the single crystal SiC 9 by feeding raw materials for producing the single crystal SiC together with an inert gas A onto the SiC seed crystal 4 in the crucible 2 having a high temperature atmosphere. In the growth process, a process for feeding three raw material components comprising SiC particles, SiO2 particles and carbon particles as the raw materials for producing the single crystal SiC is included. In the method, the tip end of the raw material feeding tube 6 is processed to have an inner diameter of 80% of the crystal diameter of the SiC seed crystal 4.
KANENIWA TORU
NOJIMA YOSHIHIRO
ABE TAKAO
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