Title:
SACRIFICIAL ETCH PROTECTION LAYERS FOR REUSE OF WAFERS AFTER EPITAXIAL LIFT-OFF
Document Type and Number:
Japanese Patent JP2020155778
Kind Code:
A
Abstract:
To provide a lift-off method with sacrificial etch protection layers for reuse of wafers after epitaxial lift-off.SOLUTION: A substrate protective layer 1 is positioned above a growth substrate, a substrate protective layer 2 is positioned above the substrate protective layer 1, a substrate protective layer n is positioned above a substrate protective layer n-1, a sacrificial layer is positioned above the substrate protective layer n, and a cell is positioned above the sacrificial layer. The cell is released by etching the sacrificial layer with an etchant, and the substrate protective layers n to 1 are each etched. The growth substrate contains GaAs, and the substrate protective layer n contains a material selected from the group consisting of lattice matched AlInP, lattice matched InGaP, lattice matched AlGaAs, and a combination thereof.SELECTED DRAWING: Figure 1
Inventors:
STEPHEN R FORREST
JERAMY D ZIMMERMAN
LEE KYUSANG
JERAMY D ZIMMERMAN
LEE KYUSANG
Application Number:
JP2020088818A
Publication Date:
September 24, 2020
Filing Date:
May 21, 2020
Export Citation:
Assignee:
UNIV MICHIGAN
International Classes:
H01L31/18; C30B29/42; C30B33/10; H01L21/306
Foreign References:
| WO2011066029A2 | 2011-06-03 |
Attorney, Agent or Firm:
Hatta International Patent Corporation