走査型電子顕微鏡および走査型電子顕微鏡の２次電子検出方法

Japanese Patent JP7294971

B2

To provide a scanning electron microscope and a secondary electron detection method for a scanning electron microscope that cancel and reduce deflection aberrations generated at a first deflector, a second deflector, and a third deflector to detect secondary electrons generated on a sample's surface with high spatial resolution.SOLUTION: A scanning electron microscope comprises: a first deflector 4 for deflecting primary electrons generated at a primary electron irradiation system; a second deflector 5 that deflects primary electrons deflected by the first deflector in the reverse direction to cancel aberrations, makes a direction of the primary electrons agree with an axis of an imaging system to make the primary electrons be radiated to a sample, and deflects secondary electrons discharged from the sample in a direction reverse to that of the primary electrons to separate the secondary electrons, the second deflector constituted by a magnetic field and an electric field; the imaging system that thinly narrows a beam of the primary electrons deflected by the second deflector and directed to the direction made to agree with the axis of the imaging system before radiating the narrowed beam to the sample and makes the secondary electrons discharged from the sample be incident on the second deflector 5, the imaging system constituted by an objective lens; and a secondary electron detection system for detecting the secondary electrons after being deflected by the second deflector 5.SELECTED DRAWING: Figure 2

Keizo Yamada

JP2019171588A

June 20, 2023

September 20, 2019

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Holon Co., Ltd.

H01J37/147; H01J37/153; H01J37/18; H01J37/20; H01J37/244; H01J37/28; H01J37/29

JP2008078058A
JP2006332038A
JP2016066413A

Morihiro Okada

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