Title:
VAPOR GROWTH METHOD
Document Type and Number:
Japanese Patent JP3125779
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent contamination due to curling up and the back flow of the dust of product generated and to improve the quality of film by preventing turbulence of the gas of a reaction part generating, when a film is formed and when an exhaust line is switched before and after the standby of a reaction part is switched.
SOLUTION: Two exhaust lines for a standby system and a growth system are provided on a reaction part 1, where a semiconductor wafer is vapor grown. When the exhaust lines are switched before and after formation of film and a reaction part in a standby state by operating the pressure gauge 2, which monitors the pressure of the reaction part, the valves 4 and 5 provided on the exhaust lines of the standby system and the growth system, a pump 7 provided on the growth system and a conductance valve 6, the pressure of the exhaust part of the exhaust line and the pressure of the growth system are compared, so as to suppress the fluctuation of pressure of the reaction part to a minimum by controlling the fluctuation of the pressure of the reaction part.
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Inventors:
Nakano Satoshi
Application Number:
JP4112599A
Publication Date:
January 22, 2001
Filing Date:
February 19, 1999
Export Citation:
Assignee:
NEC
International Classes:
H01L21/205; C23C16/44; C23C16/455; H01L21/31; (IPC1-7): H01L21/205; C23C16/455
Domestic Patent References:
| JP9157850A | ||||
| JP8283946A |
Attorney, Agent or Firm:
Naka Kanno