Title:
SEED FOR EPITAXIAL CONGELATION
Document Type and Number:
Japanese Patent JPS5580800
Kind Code:
A
Abstract:
A seed and method for epitaxial solidification of materials, a preferred seed having at least a portion with a melting point 20 DEG -45 DEG C. depressed from that of the alloy being solidified into an article. Boron and silicon are preferably added to nickel superalloys seeds when directionally solidified columnar grain and single crystal articles are formed. Improved seeds also have surface compositions which promote the dissolution of surface contamination films that interfere with epitaxy.
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Inventors:
BURUUSU ERINTON TAAKERUSEN
Application Number:
JP16265379A
Publication Date:
June 18, 1980
Filing Date:
December 13, 1979
Export Citation:
Assignee:
UNITED TECHNOLOGIES CORP
International Classes:
B22D27/04; C30B11/00; C30B11/14; C30B19/00; C30B21/00; C30B21/02; C30B29/52; (IPC1-7): C23C1/00; C30B19/00; C30B29/52
Domestic Patent References:
| JPS4833352A | 1973-05-09 |