PURPOSE: To accurately control the thickness processing of a thin film by specifying a semiconductor substrate temperature in the epitaxial growth of the thin film of II-VI compound semiconductor.

CONSTITUTION: For example, on a semiconductor substrate 34 comprising a material such as GaP a mask 35 comprising a material of different quality from that of the substrate such as Si3N4 is provided, and a thin film of II-VI compound semiconductor 36 such as ZnS0.84Se0.16 is selectively grown on the surface of the GaP substrate with use of zinc, sulfur, and selenium as stock materials. Thereupon, the semiconductor substrate 31 in the epitaxial growth of the thin film of II-VI compound semiconductor 36 is kept at a temperature above 300°C and below 700°C. Hereby, no II-VI compound semiconductor is deposited on the mask 35 eliminating the need of an etching process of the II-VI compound semiconductor which etching is technically difficult. Thus, fine patterning of thin film of the II-VI compound semiconductor is assured with use of a mask which facilitates pattern formation and etching removal.