Title:
スパッタリング及び再スパッタリングのための自己イオン化及び誘導性結合プラズマ
Document Type and Number:
Japanese Patent JP2005514777
Kind Code:
A
Abstract:
A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.
Inventors:
Din, payjun
Shu, Zen
Moselie, Roderick, Sea.
Renga Rajan, Suraj
Mighty, Nirmalha
Carol, Daniel, A.
Chin, Barry
Smith, Paul, F.
Angelo, daryl
Thoria, anish
Fu, Jiang Min
Chen, Hussen
Gopal Raja, Prabram
Tan, Shanmin
Forster, John, Sea.
Shu, Zen
Moselie, Roderick, Sea.
Renga Rajan, Suraj
Mighty, Nirmalha
Carol, Daniel, A.
Chin, Barry
Smith, Paul, F.
Angelo, daryl
Thoria, anish
Fu, Jiang Min
Chen, Hussen
Gopal Raja, Prabram
Tan, Shanmin
Forster, John, Sea.
Application Number:
JP2003557025A
Publication Date:
May 19, 2005
Filing Date:
December 10, 2002
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C14/04; C23C14/34; C23C14/35; H01J37/32; H01J37/34; H01L21/28; H01L21/285; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01L21/285; C23C14/35; H01L21/28; H01L21/3205
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada
Yuichi Yamada