PURPOSE: To provide a semiconductor acceleration sensor which manufacturing process is simple and which can form a surely sealed structure without producing a stepped part or the like at the bonding part of a semiconductor substrate to a sheet member such as a glass sheet or the like.

CONSTITUTION: This sensor is composed of a stacked structure in which both the surface and the rear surface of a silicon sheet 10 hare been sandwiched between, and held by, glass sheets 11, 12. An n+ diffused layer 15 which is used also as an interconnection and an aluminum electrode 16 are formed on the surface of an overlapped body 14 formed on the silicon sheet, and a movable electrode 17 is formed. A recessed part 20 is formed in a prescribed position (a position opposite to the movable electrode) on the surface of the glass sheet at the upper part, aluminum is vapor-deposited on its bottom face, and a fixed electrode 18 is formed. An interconnection 22 is formed on the side face of the recessed part and on the surface of the glass sheet so as to be continued to the fixed electrode, and its end part is used as a taking-out part 22a. Thereby, only the interconnection (the n+ diffused layer) for the movable electrode is situated at a bonding part 23, and a stepped part is eliminated.