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Title:
SEMICONDUCTOR APPARATUS
Document Type and Number:
Japanese Patent JP2006100481
Kind Code:
A
Abstract:

To suppress the leak etc. due to ion migration.

A trench 15 is provided between a source electrode 4 and a gate electrode 5 as a ion migration preventing zone. The trench 15 is formed so as to surround the source electrode 4.


Inventors:
KATO TOMONORI
Application Number:
JP2004283292A
Publication Date:
April 13, 2006
Filing Date:
September 29, 2004
Export Citation:
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Assignee:
NEC ELECTRONICS CORP
International Classes:
H01L29/78; H01L21/3205; H01L21/336; H01L23/48; H01L23/52
Domestic Patent References:
JP2003188317A2003-07-04
JP2000183468A2000-06-30
JP2001274309A2001-10-05
JP2004158758A2004-06-03
JP2003332483A2003-11-21
JP2004140115A2004-05-13
JP2003168759A2003-06-13
JPH11317403A1999-11-16
Foreign References:
US20040094841A12004-05-20
Attorney, Agent or Firm:
Shinji Hayami



 
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