Title:
半導体ベースの画像センサ
Document Type and Number:
Japanese Patent JP2007521863
Kind Code:
A
Abstract:
A detector arrangement and/or a semiconductor-based image sensor with a plurality of detector elements or image pixels is described, which each have an integrated SD-(Sigma Delta) Modulator ( 20 to 29 ) or an integrated SD-A/D-(Sigma Delta Analog/Digital) converter ( 20 to 30 ), as well as particularly such a detector arrangement and/or such an image sensor on the basis of a CMOS-semiconductor. Particularly on the basis of the differential version and/or the multi-phase structure of the SD modulator and the SD-A/D converter, a detector arrangement and/or an image sensor with specially high noise robustness, a high dynamic range and a lesser noise can be produced, so that this is particularly suitable for usage in Computer Tomography (CT) apparatus.
Inventors:
Sui Olaf
La Hôtel Joseph
Gunade Michael
Weiler Dirk
Chemna Armin
Vogtmeier Heleon
Steadman Rogel
La Hôtel Joseph
Gunade Michael
Weiler Dirk
Chemna Armin
Vogtmeier Heleon
Steadman Rogel
Application Number:
JP2006548535A
Publication Date:
August 09, 2007
Filing Date:
January 07, 2005
Export Citation:
Assignee:
Koninklijke Philips Electronics N.V.
Fraonhofel Gesellschaft Crane Forderung del Angewanten Forschung Evi
Fraonhofel Gesellschaft Crane Forderung del Angewanten Forschung Evi
International Classes:
A61B6/03; G01T1/24; H04N3/15; H04N5/32
Domestic Patent References:
| JPH04229722A | 1992-08-19 |
Attorney, Agent or Firm:
Susumu Tsugaru
Akihiko Miyazaki
Fueda Shusen
Akihiko Miyazaki
Fueda Shusen