SEMICONDUCTOR CHIP AND MANUFACTURING METHOD OF THE SAME

Japanese Patent JP2016051885

A

PROBLEM TO BE SOLVED: To provide a semiconductor chip and a manufacturing method of the same, which can simplify a manufacturing process while ensuring a creepage distance between a first electrode and a second electrode.SOLUTION: A semiconductor chip 10 comprises: a semiconductor element 12 which has one surface 12a, a rear face 12b and a lateral face 12c, in which a first electrode 14 is formed on the one surface and a second electrode 16 is formed on the rear face; and a protection film 18. The protection film has: a ring-shaped one-surface side covering region 18a which covers the one surface including an edge part 14a of the first electrode and surrounds an exposed part 14b of the first electrode; and a ring-shaped hanging-over part 18b which extends continuously from the one-surface side covering region to cover a whole area of the lateral face and hangs over the lateral face in a direction orthogonal to a thickness direction of the semiconductor element. When assuming that a length from an inner peripheral end to an outer peripheral end of the ring-shaped one-surface side covering region is L1 in a direction where the hanging-over region hangs over the lateral face, and a length from an inner peripheral end to an outer peripheral end of the ring-shaped hanging-over part is L2, the protection film is formed to satisfy L1