Title:
SEMICONDUCTOR DEVICE CAPABLE OF OPTICAL CONTROL
Document Type and Number:
Japanese Patent JPH0378261
Kind Code:
A
Abstract:
PURPOSE: To use a semiconductor device for high voltage with a small required area by forming a horizontal enhanced type FET, a depletion type FET, and a light-receiving diode on the upper surface of a semiconductor substrate and connecting the electrodes appropriately. CONSTITUTION: An n-type zone 2 for demarcating an upper surface 16 of a semiconductor substrate 1 is provided. An n<+> -substrate contacts the lower side of the zone 2. A gate zone 4 of enhanced type FET is buried into the zone 2. An n-type source zone 7 is buried into the zone 4. The drain zone of FET is formed by the zone 2. Separate p-type zones 5 and 6 are formed in the zone 2. Zones 8-10 of the drain and source gates are buried into the zone 5. Zones 8-10 form a horizontal depleted type FET, while the zone 6 forms the anode zone of a light-receiving diode. By using a device, light can be easily activated by a vertical FET, and a large inverse voltage can be designed to be generated.
Inventors:
EERITSUHI KAIFURAA
Application Number:
JP20795290A
Publication Date:
April 03, 1991
Filing Date:
August 06, 1990
Export Citation:
Assignee:
SIEMENS AG
International Classes:
H01L31/10; H01L27/144; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Tomimura Kiyoshi
Next Patent: JPH0378262