Title:
SEMICONDUCTOR DEVICE COMPRISING COBALT SILICIDE FILM AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP2586345
Kind Code:
B2
Abstract:
PURPOSE: To selectively form a cobalt silicide film which has small dispersion and excels in the orientation of crystal by providing a titanium layer and a silicon oxide film layer under a cobalt layer and making a high melting-point metal, the oxide production free energy of which is lower than that of a silicon oxide, react to a silicon oxide film
CONSTITUTION: An element separation region 6 is formed on a single-crystal silicon substrate and after that, thermal oxidation is performed to form a gate oxide film 2. A high melting-point metal, the oxide production free energy of which is lower than that of a silicon oxide film 2, for instance, Ti is sputtered thereto to form a Ti layer 8. After Co is sputtered thereto 16 form a Co layer, heat treatment is performed. Thereby, the reducing reaction of silicon of the silicon oxide film 2 is made by Ti on a diffusion layer 5 and after the silicon oxide film 2 completely disappears, the solid phase diffusion of Co into Ti is performed to reach the surface of the diffusion layer 5 and form a CoSi2 layer 11. Therefore, since an intermediate phase is not formed, an excellent CoSi2 layer can be obtained.
Inventors:
NISHIO NAOHARU
Application Number:
JP24921994A
Publication Date:
February 26, 1997
Filing Date:
October 14, 1994
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/265; H01L21/28; H01L21/285; H01L21/336; H01L21/768; H01L29/78; (IPC1-7): H01L29/78; H01L21/265; H01L21/28; H01L21/324; H01L21/336
Domestic Patent References:
| JPS61135156A | ||||
| JPH02106971A |
Attorney, Agent or Firm:
Wakabayashi Tadashi