To provide an amorphous high dielectric film without being crystallized in activation heat treatment.
Composition distribution in the direction of a film thickness in the amorphous high dielectric film 2 contains more metal oxides of a high dielectric constant at a side closer to a substrate 1, and contains more insulating oxides suppressing crystallization at a side remote from the substrate 1. The insulating oxides for suppressing crystallization exist at the side remote from the substrate 1 liable to produce crystallization. The metal oxides of the high dielectric constant exist more at the side closer to the substrate 1 hard to produce crystallization, and an effective dielectric constant of the amorphous high dielectric film 2 is enhanced.
YAMAZAKI TAKAHIRO
KANEDA CHIHOKO
Next Patent: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD