Title:
ボンディングパッドを有する半導体デバイス及びその製造方法
Document Type and Number:
Japanese Patent JP5960232
Kind Code:
B2
Abstract:
A semiconductor device including a device substrate having a front side and a back side. The semiconductor device further includes an interconnect structure disposed on the front side of the device substrate, the interconnect structure having a n-number of metal layers. The semiconductor device also includes a bonding pad disposed on the back side of the device substrate, the bonding pad extending through the interconnect structure and directly contacting the nth metal layer of the n-number of metal layers.
Inventors:
Cai Shukichi
Yang Atsushi
Liu Hitoshi
Hayashi Masaken
Wangdeung
Hayashitsuki Autumn
Yang Atsushi
Liu Hitoshi
Hayashi Masaken
Wangdeung
Hayashitsuki Autumn
Application Number:
JP2014236512A
Publication Date:
August 02, 2016
Filing Date:
November 21, 2014
Export Citation:
Assignee:
Taiwan Semiconductor Manufacturing Company,Ltd.
International Classes:
H01L21/3205; H01L21/768; H01L23/522; H01L27/144; H01L27/146; H01L31/08
Domestic Patent References:
| JP2009176777A | ||||
| JP2010050149A |
Foreign References:
| US20090020842 |
Attorney, Agent or Firm:
Ken Ieiri