Title:
SEMICONDUCTOR DEVICE HAVING OHMIC ELECTRODE AND FORMING METHOD OF OHMIC ELECTRODE
Document Type and Number:
Japanese Patent JPH09191100
Kind Code:
A
Abstract:
To provide an ohmic electrode excellent in quality and uniformity.
A first N-ZnSe epitaxial layer 2 is formed on the surface of a ZnSe substrate 1. A second N-ZnSe epitaxial layer 3 is formed on the first ZnSe epitaxial layer 2. In the second N-ZnSe epitaxial layer 3, voids exist which are formed because the number of Se atoms is relatively large. On the surface of the second N-ZnSe epitaxial layer 3, an ohmic electrode 4 is formed.
More Like This:
Inventors:
SAEGUSA AKIHIKO
Application Number:
JP385496A
Publication Date:
July 22, 1997
Filing Date:
January 12, 1996
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L29/43; H01L21/28; H01L33/28; H01L33/36; (IPC1-7): H01L29/43; H01L33/00
Attorney, Agent or Firm:
Fukami Hisaro (2 outside)