Title:
SEMICONDUCTOR DEVICE AND HIGH FREQUENCY POWER AMPLIFIER MODULE
Document Type and Number:
Japanese Patent JP2006270526
Kind Code:
A
Abstract:
To enhance the power amplification efficiency of a high-frequency power amplifier module, and to reduce the area of chip layout.
A power amplifier region 38 is located at the center section of a semiconductor chip CH. The power amplifier region 38 is a region, where a power amplifier 32a for amplifying a high-frequency signal is formed, and a sense amplifier 32b is formed within the region. That is, the region formed with the power amplifier 32a and the region formed with the sense amplifier 32b are each formed not as independent cells, but in identical cell.
Inventors:
NOMURA MASATAKA
Application Number:
JP2005085821A
Publication Date:
October 05, 2006
Filing Date:
March 24, 2005
Export Citation:
Assignee:
RENESAS TECH CORP
International Classes:
H03F3/213; H01L21/82; H01L21/822; H01L21/8234; H01L27/04; H01L27/088; H03F1/02; H03F3/195; H03G3/20; H03G3/30
Attorney, Agent or Firm:
Yamato Tsutsui
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