Title:
SEMICONDUCTOR DEVICE FOR HIGH-FREQUENCY SWITCH, HIGH-FREQUENCY SWITCH, AND HIGH-FREQUENCY MODULE
Document Type and Number:
Japanese Patent JP2015207639
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device for a high-frequency switch capable of reducing the product (Ron*Coff) of an on-resistance and an off-capacitance, a high frequency switch including the semiconductor device for the high-frequency switch, and a high-frequency module including the high-frequency switch.SOLUTION: A semiconductor device for a high-frequency switch comprises an SOI substrate including an embedded oxide film and a semiconductor layer on a support substrate, and a gate electrode provided on the semiconductor layer. The semiconductor layer includes a first region below the gate electrode, and a second region other than the first region. A third region is provided in at least a part of the second region. A fourth region having a different thickness than the thickness of the third region is provided in at least a part of the first region.
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Inventors:
KURANOUCHI ATSUSHI
Application Number:
JP2014086804A
Publication Date:
November 19, 2015
Filing Date:
April 18, 2014
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/336; H01L21/338; H01L29/786; H01L29/812; H03K17/687; H03K17/693
Attorney, Agent or Firm:
Patent Business Corporation Tsubasa International Patent Office
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