PURPOSE: To form a device in a structure suitable for high withstand voltage formation by a method wherein low impurity concentration regions are provided in the periphery of an impurity region which composes a transistor, resistor, etc., and wirings are provided on the low impurity concentration region.
CONSTITUTION: The base region of a N-P-N transistor, or the emitter and collector regions of a P-N-P transistor, and a resistor are composed by providing a P type diffused layer on the main surface of an N type semiconductor substrate 1. The regions 3 of low impurity concentration are formed in the periphery of this region 2. Then, the metallic wirings 5 are provided on the surface of the substrate 1 via an insulation film 4, without being positioned on the region 2, on the regions 3.
KIMURA MASATOSHI
OCHI SHIKAYUKI
YOSHIMURA MASAYOSHI
YAMAGUCHI TAKASHI
KOUDA TOYOMASA
