Title:
SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2020145430
Kind Code:
A
Abstract:
To provide a semiconductor device including a trench structure and a manufacturing method thereof.SOLUTION: In a semiconductor device 100, a first conductive type source region 104 includes a first source portion region 1041, a second source portion region 1042, and a third source portion region 1043 directly adjacent to a contact 112 in a source contact area 113 of the first surface. The second source portion region is arranged vertically between the first source portion region and the third source portion region. A vertical doping concentration profile of the source region has a minimum doping concentration within the second source portion region and a maximum doping concentration within the third source portion region. Each of the second source portion region and the third source portion region overlaps the source contact area.SELECTED DRAWING: Figure 1
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Inventors:
THOMAS BASLER
CASPAR LEENDERTZ
HANS-JOACHIM SCHULZE
CASPAR LEENDERTZ
HANS-JOACHIM SCHULZE
Application Number:
JP2020037497A
Publication Date:
September 10, 2020
Filing Date:
March 05, 2020
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/739
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation