SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD

Title:

SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD

Document Type and Number:

Japanese Patent JP2002118169

Kind Code:

A

Abstract:

To reduce line resistance, connection resistance and interconnection capacitance while enhancing electromigration resistance by preventing diffusion of copper even if an interconnection trench and a via hole made in an insulation film are directly filled with a metal principally comprising copper.

An SiN film 406, a BCB(benzocyclobutene) insulation film 407, an SiC film 408, a BCB insulation film 409, an SiC film 410 and an SiO2 film 411 are deposited on a Cu interconnection 405, a via hole 413 is opened by selective etching (d) and then an interconnection trench 414 is made (e). Subsequently, a Cu seed film 415 is deposited by MOCVD and a Cu film 416 is formed using the Cu seed film as an electrode (f). Excess Cu film is then removed by CMP, a Cu interconnection 417 connected with the Cu interconnection 405 through the via hole is formed, and then an SiC film 418 is formed (g).

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Inventors:

TADA MUNEHIRO
HIROI MASAYUKI
KAWAHARA JUN
HAYASHI YOSHIHIRO

Application Number:

JP2000311538A

Publication Date:

April 19, 2002

Filing Date:

October 12, 2000

Export Citation:

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Assignee:

NEC CORP

International Classes:

H01L21/768; H01L21/312; H01L23/522; (IPC1-7): H01L21/768; H01L21/312

Attorney, Agent or Firm:

Yusuke Omi

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