Title:
Semiconductor device and its fabricating method
Document Type and Number:
Japanese Patent JP6197966
Kind Code:
B2
Abstract:
A semiconductor device including a mesa portion formed on a front surface side of a semiconductor substrate; a floating portion formed on the front surface side of the semiconductor substrate; a trench formed surrounding the floating portion and separating the mesa portion from the floating portion; an electrode formed inside the trench; and an outside wiring portion formed along an arrangement direction of the mesa portion and the floating portion, outside the region surrounded by the trench. An edge of the outside wiring portion on the mesa portion and floating portion side includes a protruding portion formed in at least part of a region opposite the floating portion and protruding beyond the trench toward the floating portion side, and a recessed portion formed in at least part of a region opposite the mesa portion and recessed to the outside wiring portion side farther than the protruding portion.
Inventors:
Tatsuya Naito
Application Number:
JP2016564706A
Publication Date:
September 20, 2017
Filing Date:
September 15, 2015
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/739
Domestic Patent References:
| JP2007324539A | ||||
| JP2011243946A | ||||
| JP2009105268A | ||||
| JP6268165A | ||||
| JP2012028567A | ||||
| JP2012043890A | ||||
| JP2009010395A |
Foreign References:
| WO2013035818A1 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation