Title:
SEMICONDUCTOR DEVICE AND ITS FABRICATION
Document Type and Number:
Japanese Patent JP3338911
Kind Code:
B2
Abstract:
PURPOSE: To provide means for preventing the crystal structure on the surface of an AlP layer, being inserted, from deteriorating when a compound semiconductor layer containing As is grown on a compound semiconductor layer containing P by low pressure metal organic vapor phase epntaxial growth system.
CONSTITUTION: An AlP layer 3 is grown by 5-10&angst on a compound semiconductor layer or a substrate containing P in the form of InP, for example, by low pressure metal organic vapor phase epitaxial growth system. The AlP layer 3 is left in PH3 atmosphere in order to stabilize the surface and then an InGaAs layer, an InAlAs layer 4 or a compound semiconductor layer containing As, e.g. a heterocrystal layer of InGaAs/InAlAs, is grown by low pressure metal organic vapor phase epitaxial growth system. This method realizes a semiconductor device having excellent characteristics, e.g. HEMT.
Inventors:
Kenji Imanishi
Application Number:
JP4218194A
Publication Date:
October 28, 2002
Filing Date:
March 14, 1994
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/223; H01L21/205; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L21/338; H01L21/205; H01L29/778; H01L29/812
Other References:
Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ，米国，１９９２年４月２０日，Ｖｏｌ．６０，Ｎｏ．１６，ｐ．１９８１−１９８３
Ｆｏｕｒｔｈ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｄｉｕｍ Ｐｈｏｓｐｈｉｄｅ ａｎｄ Ｒｅｌａｔｅｄ Ｍａｔｅｒｉａｌｓ，１９９２，米国，１９９２年４月，ｐ．２８６−２８９
Ｉｎｄｉｕｍ Ｐｈｏｓｐｈｉｄｅ ａｎｄ Ｒｅｌａｔｅｄ Ｍａｔｅｒｉａｌｓ，１９９４．Ｃｏｎｆｅｒｅｎｃｅ Ｐｒｏｃｅｅｄｉｎｇ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏｎｆｅｒｅｎｃｅ ｏｎ，米国，１９９４年，ｐ．５７５−５７８
Ｆｏｕｒｔｈ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｄｉｕｍ Ｐｈｏｓｐｈｉｄｅ ａｎｄ Ｒｅｌａｔｅｄ Ｍａｔｅｒｉａｌｓ，１９９２，米国，１９９２年４月，ｐ．２８６−２８９
Ｉｎｄｉｕｍ Ｐｈｏｓｐｈｉｄｅ ａｎｄ Ｒｅｌａｔｅｄ Ｍａｔｅｒｉａｌｓ，１９９４．Ｃｏｎｆｅｒｅｎｃｅ Ｐｒｏｃｅｅｄｉｎｇ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏｎｆｅｒｅｎｃｅ ｏｎ，米国，１９９４年，ｐ．５７５−５７８
Attorney, Agent or Firm:
Shoji Kashiwaya (1 person outside)