To suppress the amount of the side etching of a lower electrode, prevent an electrode pad disconnection, and improve reliability by forming a photosensitive resin greater than the outer diameter dimension of a protruding electrode.

An insulation film 16 with an opening in an electrode pad 14, a common electrode connected to the electrode pad 14, and a protruding electrode 22 connected to the common electrode are provided on a semiconductor substrate 12. Further, a photosensitive resin 20 at a part below the overhang of the protruding electrode 22 is of a larger shape than the outer diameter of the protruding electrode 22. The photosensitive resin 20 at this time is constituted larger than the edge part of the protruding electrode 22 by 3-5μm. In this manner, by forming the photosensitive resin 20 larger than the outer diameter dimension of the electrode 22, the etching margin of a common electrode can be secured, thus disconnection of an electrode pad 14 due to the overetching of the common electrode and corrosion due to the soaking of an etching liquid can be prevented and hence the quality of a semiconductor device can be improved.