To improve current density in a semiconductor element where inter- band tunnel conduction is used.
In a prescribed region of a p-type Si semiconductor substrate 11 whose impurity concentration is about 4×1015 cm-3, an isolation film 12 formed of an insulation film and a degenerated p-type diffusion layer 13 as a first conductivity-type high concentration semiconductor layer having an impurity concentration of 1×1019 cm-3 or higher are formed, and it is processed as irregular form having an aspect ratio of 2 or more. An interval 21 between a projecting groove and a recessed groove is processed into size of a groove with a width of 20. A 1 to 3 nm thickness tunnel insulating film 14 consisting of acid nitride silicon and a degenerated n-type electrode 15 as a second conductivity-type heavily-doped semiconductor layer, whose impurity concentration is 1×1019 cm-3 or higher are formed along recesses and projections on the p-type diffusion layer 13.
MORITA KIYOYUKI
MORIMOTO TADASHI
YOSHII SHIGEO
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