SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - MATSUSHITA ELECTRIC IND CO LTD

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2004128123

Kind Code:

A

Abstract:

To provide a semiconductor device that can reduce leakage currents resulting from crystal defects, and to provide a method of manufacturing the device.

The semiconductor device has a MISFET provided in the element forming area Re of a semiconductor substrate 11 and a trench isolation 13 surrounding the sides of the area Re. An oxygen passage suppressing film 23 is provided from the surface of the isolation 13 to a portion near the isolation 13 of the element forming area Re. The film 23 is composed of a silicon nitride film etc., which hardly permeates oxygen. Consequently, the cubical expansion of the upper edge section of the element forming area Re is suppressed and stresses can be reduced, because the upper edge section is hardly oxidized.

Inventors:

IMAIDE MASAHIRO
UMIMOTO HIROYUKI

Application Number:

JP2002288531A

Publication Date:

April 22, 2004

Filing Date:

October 01, 2002

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L21/76; H01L21/762; H01L21/8234; H01L29/78; (IPC1-7): H01L21/76; H01L29/78

Attorney, Agent or Firm:

Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Teshima Masaru
Atsushi Fujita

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