SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2005051023

Kind Code:

A

Abstract:

To provide a semiconductor device having a high breakdown voltage transistor that is improved in breakdown voltage and operating characteristics, and to provide a method of manufacturing the device.

The semiconductor device contains a transistor which comprises gate insulating layers 60 provided above a semiconductor layer 10, offset insulators 66 which are provided to come into contact with the gate insulating layers 60 in the lateral sections of the layers 60 above the semiconductor layer 10, and gate electrodes 70 provided above the gate insulating layers 60. The transistor also comprises side-wall insulating layers 72 provided to cover at least the side faces of the gate electrodes 70, and impurity regions 40, 42, 50, and 52 provided in the semiconductor layer 10.

Inventors:

NODA TAKASHI
HAYASHI MASAHIRO
EBINA AKIHIKO
TSUYUKI MASAHIKO

Application Number:

JP2003281037A

Publication Date:

February 24, 2005

Filing Date:

July 28, 2003

Export Citation:

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Assignee:

SEIKO EPSON CORP

International Classes:

H01L27/08; H01L21/8234; H01L21/8238; H01L27/088; H01L27/092; H01L29/78; (IPC1-7): H01L29/78; H01L21/8234; H01L21/8238; H01L27/08; H01L27/088; H01L27/092

Attorney, Agent or Firm:

Inoue Ichi
Yukio Fuse
Mitsue Obuchi

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