SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - MATSUSHITA ELECTRIC IND CO LTD

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2005302816

Kind Code:

A

Abstract:

To provide a semiconductor device and its manufacturing method, capable of being mounted in high density by improving transverse strength and laser stamping visibility, without lowering the superiority of making the device thin.

The semiconductor device comprises a semiconductor element 11; an element electrode 12 formed on the surface of the semiconductor element 11; a first insulating layer 14 formed on the semiconductor element 11 and having an opening part on the element electrode 12; a first metal wiring 20, formed on the first insulating layer 14, and electrically connected with the element electrode 12 in the opening part in the first insulating layer 14; a second metal wiring 21 formed on the first metal wiring 20; a second insulating layer 26 for sealing the semiconductor element 11, first insulating layer 14, first metal wiring 20, and second metal wiring 21, such that an upper surface of the second metal wiring 21 is exposed; and a strength reinforcing layer 22 formed in a recessed part disposed on a rear surface side of the semiconductor element 11.

Inventors:

NAKANO TAKAHIRO
NAKAMURA AKIO
WATASE KAZUMI

Application Number:

JP2004113024A

Publication Date:

October 27, 2005

Filing Date:

April 07, 2004

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L23/52; H01L21/02; H01L21/3205; H01L23/12; (IPC1-7): H01L23/12; H01L21/02; H01L21/3205

Attorney, Agent or Firm:

Mitsutake Murayama

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