To prevent short circuiting among adjoining conductive patterns in a semiconductor device, wherein micro conductive patterns formed of a metallic thin film are formed on a semiconductor substrate.

Insulating films 20a and 20b covering conductive patterns 4a and 4b are made apart from each other among adjoining conductive patterns. Thus, even if line-to-line short circuiting occurs between the adjoining conductive patterns, a short-circuited section is exposed to the outside from a clearance 21 between the insulating films. Then, by applying etching in this state, the exposed line-to-line short-circuited section is removed through the clearance 21 between the insulating films 20a and 20b.