SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2007235046

Kind Code:

A

Abstract:

To provide a semiconductor device and its manufacturing method which prevent defective shorting between contact holes due to voids.

The semiconductor device comprises first and second MOSFETs formed on a semiconductor substrate (101), a first stress film (110) formed on the first MOSFET, a second stress film (112) which is formed on the second MOSFET and stacked at the end of the first stress film, to provide a void (V) with the side surface of the first stress film, and an insulating film formed on the first stress film and the second stress film. The border between the first stress film and the second stress film comprises a region (A) which is not covered with neither first stress film nor second stress film, with the insulating film embedded in at least a part of the void and the region.

Inventors:

EDA KENTARO

Application Number:

JP2006057897A

Publication Date:

September 13, 2007

Filing Date:

March 03, 2006

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L21/8238; H01L21/28; H01L21/768; H01L27/092

Attorney, Agent or Firm:

Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto

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