Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3443066
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being easily structured by semiconductor layers wherein the angle and the position of each member constituting a raised structure can correctly be controlled and to provide its manufacturing method.
SOLUTION: A release layer 2 formed of AlGaAs, a strain layer 5 and a constituent element layer 6 are formed on a GaAs substrate 1. The strain layer 5 includes an InGaAs layer 3 and a GaAs layer 4. The constituent element layer 6 includes an InGaAs layer 61A and a DBR film 62A. A recessed part 10 defining a bent region is formed on the constituent element layer 6. The constituent element layer 6, the strain layer 5 and the release layer 2 are removed nearly in a U-shaped form, so that a slot 11 is formed. The release layer 2 under the strain layer 5 is selectively removed. The strain layer 5 is so bent in a region 12 under the recessed part 10 as to relax the strain attributable to the difference of the lattice constant between the InGaAs layer 3 and the GaAs layer 4, so that the constituent element layer 6A is raised vertically to the GaAs substrate 1.
Inventors:
Pablo Baccaro
Application Number:
JP2000067672A
Publication Date:
September 02, 2003
Filing Date:
March 10, 2000
Export Citation:
Assignee:
International Telecommunications Research Institute Ltd.
International Classes:
B81B3/00; B81B7/02; B81C1/00; H01L33/24; H01L33/38; H01L33/46; H01S5/10; (IPC1-7): B81B3/00; B81C1/00; H01L33/00
Domestic Patent References:
| JP8114408A | ||||
| JP5296713A | ||||
| JP5169567A |
Attorney, Agent or Firm:
Yoshito Fukushima