Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3700708
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which can secure an electrically effective film thickness required for the insulation film of an electronic element by using the depletion of the electrode of the electronic element even if there is no physical differences in film thickness of the insulation film, and to provide a method of manufacturing the same.
SOLUTION: The gate electrode 4a of a transistor Tr1 for a high breakdown voltage to which a high supply voltage is applied contains impurities at a relatively low concentration, and hence is easily depleted when applied with the gate voltage. Since the depletion of the gate electrode 4a is equivalent to increasing the film thickness of a gate insulation film 3, an electrically effective film thickness required for the gate insulation film 3 can be made large. Meanwhile, the gate electrode 4b of a transistor Tr2 which requires a large driving current for a rapid operation and a high performance contains impurities at a high concentration to prevent from being depleted, thereby keeping an electrically effective film thickness of the gate insulation film 3 small.
Inventors:
Yuko Ohgishi
Application Number:
JP2003084475A
Publication Date:
September 28, 2005
Filing Date:
March 26, 2003
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L27/04; H01L21/334; H01L21/822; H01L21/8234; H01L27/06; H01L27/088; (IPC1-7): H01L21/8234; H01L21/822; H01L27/04; H01L27/06; H01L27/088
Domestic Patent References:
| JP2001035929A | ||||
| JP4335576A | ||||
| JP10189758A | ||||
| JP2000332127A |
Attorney, Agent or Firm:
Takahisa Sato