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Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD AS WELL AS ELECTRONIC APPARATUS
Document Type and Number:
Japanese Patent JP3757766
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a small semiconductor device which is manufactured easily and whose plating bonding strength is good, by a method wherein insulating films are executed to inside walls of vias formed so as to be passed through electrodes of semiconductor chips, the semiconductor chips are laminated, the electrodes of the respective semiconductor chips are electrically connected by plated parts filled into the vias, and the respective semiconductor chips are bonded by the filled plated parts; to provide its manufacturing method; and to provide an electronic apparatus using it.
SOLUTION: In the semiconductor device, a plurality of semiconductor chips are laminated so as to be multilayered. The vias which are formed so as to be passed through the electrodes of the semiconductor chips and the electrodes of the semiconductor chips are connected so as to be conductive inside the vias, and plated coupling pillar members which bond the laminated semiconductor chips are constituted so as to be installed.


Inventors:
Akira Magabe
Application Number:
JP2000207076A
Publication Date:
March 22, 2006
Filing Date:
July 07, 2000
Export Citation:
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Assignee:
Seiko Epson Corporation
International Classes:
H01L25/18; H01L23/52; H01L25/065; H01L25/07; (IPC1-7): H01L25/065; H01L25/07; H01L25/18; H01L23/52
Domestic Patent References:
JP10163411A
JP4356956A
JP10223833A
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa