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Title:
Semiconductor device and its manufacturing method
Document Type and Number:
Japanese Patent JP6010216
Kind Code:
B2
Abstract:
A coil CL1 is formed on a semiconductor substrate SB via a first insulation film, a second insulation film is formed so as to cover the first insulation film and the coil CL1, and a pad PD1 is formed on the second insulation film. A laminated film LF having an opening OP1 from which the pad PD1 is partially exposed is formed on the second insulation film, and a coil CL2 is formed on the laminated insulation film. The coil CL2 is disposed above the coil CL1, and the coil CL2 and the coil CL1 are magnetically coupled to each other. The laminated film LF is composed of a silicon oxide film LF1, a silicon nitride film LF2 thereon, and a resin film LF3 thereon.

Inventors:
Takuo Funaya
Takayuki Igarashi
Application Number:
JP2015507709A
Publication Date:
October 19, 2016
Filing Date:
March 25, 2013
Export Citation:
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Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/822; H01F17/00; H01F19/04; H01F41/04; H01L21/3205; H01L21/768; H01L23/522; H01L27/04
Domestic Patent References:
JP2010251662A2010-11-04
JP2010016142A2010-01-21
JP2003100744A2003-04-04
JP2008210828A2008-09-11
JP2010251662A2010-11-04
JP2010016142A2010-01-21
JP2003100744A2003-04-04
JP2008210828A2008-09-11
Foreign References:
WO2010140297A12010-12-09
WO2010113383A12010-10-07
WO2010140297A12010-12-09
WO2010113383A12010-10-07
Attorney, Agent or Firm:
Tsutsui International Patent Office



 
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